Page 1
EMX1
General Purpose Transistors (Dual Transistors)
1
Features
Two 2SC2412K chips in a SOT-563 package.
Mounting possible with SOT-563 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
1.200
SOT-563
1.600
1.600
0.220
MARKING:X1
0.500
0.565
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 7 V
Collector Current -Continuous 150 mA
Collector Power Dissipation 150 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
Dimensions in inches and (millimeters)
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V
(BR)CBOIC
V
(BR)CEOIC
=50μA,IE=0 60 V
=1mA,IB=0 50 V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)EBOIE
I
CBO
I
EBO
h
FE
V
CE(sat)
VCE=12V,IC=2mA,f=100MHz 180 MHz
f
T
C
ob
=50μA,IC=0 7 V
VCB=60V,IE=0 0.1 μA
VEB=7V,IC=0 0.1 μA
VCE=6V,IC=1mA 120 560
IC=50mA,IB=5mA 0.4 V
VCB=12V,IE=0,f=1MHz 2.0 3.5 pF
Page 2
Typical Characteristics
EMX1
General Purpose Transistors (Dual Transistors)
Page 3
EMX1
General Purpose Transistors (Dual Transistors)
Loading...