Supports LCD module with maximum resolution up to 176x220 at 16bpp
2 layer blending
Supports hardware display rotation for each layer
Audio CODEC
Wavetable synthesis with up to 64 tones
Advanced wavetable synthesizer capable of generating simulated stereo
Wavetable including GM full set of 128 instruments and 47 sets of percussions
PCM Playback and Record
Digital Audio Playback
Audio Interface and Audio Front End
Supports I2S interface
High resolution D/A Converters for Stereo Audio playback
Stereo analog input for stereo audio source
Analog multiplexer for Stereo Audio
FM Radio Recording
Stereo to Mono Conversion
19
3.1.5 General Description
Figure3-1-2 details the block diagram of MT6223D. on a dual-processor architecture,
MT6223D integrates both an ARM7EJ-S core and 2 digital signal processor cores. ARM7EJ-S is
the main processor that is responsible for running 2G and 2.5G protocol software. Digital signal
processors handle the MODEM algorithms as well as advanced audio functions.
Except for some mixed-signal circuitries, the other building blocks in MT6223D are connected to
either the microcontroller or one of the digital signal processors.
Specifically, MT6223D consist of the following subsystems:
Microcontroller Unit (MCU) Subsystem - includes an ARM7EJ-S RISC processor and
its accompanying memory management and interrupt handling logics.
Digital Signal Processor (DSP) Subsystem - includes 2 DSP cores and their
accompanying memory, memory controller, and interrupt controller.
MCU/DSP Interface - where the MCU and the DSPs exchange hardware and
software information.
Microcontroller Peripherals - includes all user interface modules and RF control
interface modules.
Microcontroller Coprocessors - runs computing-intensive processes in place of
Microcontroller.
DSP Peripherals - hardware accelerators for GSM/GPRS/EGDE channel codec.
Voice Front End - the data path for converting analog speech from and to digital
speech.
Audio Front End - the data path for converting stereo audio from stereo audio source
Baseband Front End - the data path for converting digital signal from and to analog
signal of RF modules.
Timing Generator - generates the control signals related to the TDMA frame timing.
Power, Reset and Clock subsystem - manages the power, reset, and clock
distribution inside MT6223D
LDOs, Power-on sequences, swicthes and SIM level shifters.
20
Figure.3-1-2 MT6223 BLOCK DIAGRAM
21
3.2 Power Amplifier Module (SKY77542)
Figure.3-2-1 SKY77542 FUNCTIONAL BLOCK DIAGRAM
The SKY77542 is a transmit and receive front-end module (FEM) with Integrated Power
Amplifier Control (iPAC.) for dual-band cellular handsets comprising GSM900 and DCS1800
operation.Designed in a low profile, compact form factor, the SKY77542 offers a complete Transmit
VCO-to- Antenna and Antenna-to-Receive SAW filter solution. The FEM also supports Class 12
General Packet Radio Service (GPRS) multi-slot operation.
The module consists of a GSM900 PA block and a DCS1800 PA block, impedance-matching
circuitry for 50 Ω input and output impedances, Tx harmonics filtering, high linearity and low
insertion loss PHEMT RF switches, diplexer and a Power Amplifier Control (PAC) block with
internal current sense resistor. A custom BiCMOS integrated circuit provides the internal PAC
function and decoder circuitry to control the RF switches. The two Heterojunction Bipolar Transistor
(HBT) PA blocks are fabricated onto a single Gallium Arsenide (GaAs) die. One PA block supports
the GSM900 band and the other PA block supports the DCS1800 band. Both PA blocks share
common power supply pads to distribute current. The output of each PA block and the outputs to
the two receive pads are connected to the antenna pad through PHEMT RF switches and a
diplexer. The GaAs die, PHEMT die, Silicon (Si) die and passive components are mounted on a
multi-layer laminate substrate. The assembly is encapsulated with plastic overmold.
Band selection and control of transmit and receive modes are performed using two external
control pads. Refer to the functional block diagram in Figure 3-2-1 below. The band select pad (BS)
selects between GSM and DCS modes of operation. The transmit enable (Tx_EN) pad controls
receive or transmit mode of the respective RF switch (Tx = logic 1). Proper timing between transmit
enable (Tx_EN) and Analog Power Control (VRAMP) allows for high isolation between the antenna
and Tx-VCO while the VCO is being tuned prior to the transmit burst.
The SKY77542 is compatible with logic levels from 1.2 V to VCC for BS and Tx_EN pads,
depending on the level applied to the VLOGIC pad. This feature provides additional flexibility for
the designer in the selection of FEM interface control logic.
22
3.3 Transceiver Module (AD6548)
Figure.3-3-1 AD6548 FUNCTIONAL BLOCK DIAGRAM
3.3.1 General Descriptions
The AD6548/9 provides a highly integrated direct conversion radio solution that combines, on a
single chip, all radio and power management functions necessary to build the most compact GSM
radio solution possible. The only external components required for a complete radio design are the
Rx SAWs, PA, Switchplexer and a few passives enabling an extremely small
cost effective GSM Radio solution.
The AD6548/9 uses the industry proven direct conversion receiver architecture of the OthelloTM
family. For Quad band applications the front end features four fully integrated programmable gain
differential LNAs. The RF is then downconverted by quadrature mixers and then fed to the
baseband programmable-gain amplifiers and active filters for channel selection. The Receiver
output pins can be directly connected to the baseband analog processor. The Receive path
features automatic calibration and tracking to remove DC offsets.
The transmitter features a translation-loop architecture for directly modulating baseband signals
onto the integrated TX VCO. The translation-loop modulator and TX VCO are extremely low noise
removing the need for external SAW filters prior to the PA.
The AD6548/9 uses a single integrated LO VCO for both the receive and the transmit circuits.
The synthesizer lock times are optimized for GPRS applications up to and including class 12.
To dramatically reduce the BOM both TX Translational loop and main PLL Loop Filters are fully
23
integrated into the device.
AD6548 incorporates a complete reference crystal calibration system. This allows the external
VCTCXO to be replaced with a low cost crystal. No other external components are required. The
AD6549 uses the traditional VCTCXO reference source.
The AD6548/9 also contains on-chip low dropout voltage regulators (LDOs) to deliver regulated
supply voltages to the functions on chip, with a battery input voltage of between 2.9V and 5.5V.
Comprehensive power down options are included to minimize power consumption in normal use.
A standard 3 wire serial interface is used to program the IC. The interface features low-voltage
digital interface buffers compatible with logic levels from 1.6V to 3.0V.
The AD6548/9 is packaged in a 5mm × 5mm , 32-lead LFCSP package.
ORDERING GUIDE Model TemperatureRange Package
AD6548BCPZ
-20°C to +85°C
LFCSP-32
AD6549BCPZ -20°C to +85°C LFCSP-32
3.3.2 Features
Fully Integrated GSM Transceiver including
Direct Conversion Receiver
4 Differential LNAs
Integrated Active RX Channel Select Filters
Programmable Gain Baseband Amplifiers
Translation Loop Direct VCO Modulator
Integrated TX VCO and tank
External TX filters eliminated
Integrated Loop filter components
High performance multi band PLL system
Fast Fractional-N Synthesizer
Integrated Local Oscillator VCO
Fully Integrated Loop filters
Crystal Reference Oscillator & Tuning System (AD6548)
Power Management
Integrated LDOs allow direct battery supply connection
The K5L6433ABM is a MultiChip Package Memory which combines 64Mbit NOR Flash
Memory and 32M bit UtRAM2.
The 64Mb NOR Flash featuring single 1.8V power supply is a 64Mbit Synchronous Burst Multi
Bank Flash Memory organized as 4Mx16. The memory architecture of the device is designed to
divide its memory arrays into 135 blocks with independent hardware protection. This block
architecture provides highly flexible erase and program capability. The 64Mb NOR Flash consists
of sixteen banks. This device is capable of reading data from one bank while programming or
erasing in the other bank. Regarding read access time, the device provides an 14.5ns burst access
time and an 70ns initial access time at 54MHz. At 66MHz, the device provides an 11ns burst
access time and 70ns initial access time. At 83MHz, the device provides an 9ns burst access time
and 70ns initial access time. At 108MHz, the device provides an 7ns burst access time and 70ns
initial access time. The device performs a program operation in units of 16 bits (Word) and an
erase operation in units of a block. Single or multiple blocks can be erased. The block erase
operation is completed within typically 0.7sec. The device requires 15mA as program/erase current
in the extended temperature ranges.
SAMSUNG’s UtRAM products are designed to meet the request from the customers who want to
cope with the fast growing mobile applications that need high-speed random access memory.
UtRAM is the solution for the mobile market with its low cost, high density and high performance
feature. device is fabricated by SAMSUNG¢s advanced CMOS technology using one transistor
memory cell. The device supports the traditional SRAM like asynchronous operation
(asynchronous page read and asynchronous write), the NOR flash like synchronous operation
(synchronous burst read and asynchronous write) and the fully synchronous operation
(synchronous burst read and synchronous burst write). These operation modes are defined
through the Confifuration Register Setting. It supports the special features for the standby power
saving. Those are the PAR(Partial Array Refresh) mode, DPD(Deep Power Down) mode and
26
internal TCSR(Temperature Compensated Self Refresh). It also supports variable and fixed
latency, driver strength settings, Burst sequence (wrap or No-wrap) options and a device ID
register (DIDR).
The K5L6433ABM is suitable for use in data memory of mobile communication system to
reduce not only mount area but also power consumption.
This device is available in 88-ball FBGA Type.
Features
<Common>
‧ Operating Temperature : -25°C ~ 85°C
‧ Package : 88-ball FBGA Type - 8mm x 10mm x 1.2mmt, 0.8mm pitch
<NOR Flash>
‧ This device has the Sync MRS option
( Extended Configuration Register )
‧ Single Voltage, 1.7V to 1.95V for Read and Write operations
‧ Organization
- 4,194,304 x 16 bit (Word Mode Only)
‧ Read While Program/Erase Operation
‧ Multiple Bank Architecture
- 16 Banks (4Mb Partition)
‧ OTP Block : Extra 256word block
‧ Read Access Time (@ CL=30pF)
- Asynchronous Random Access Time : 70ns
- Synchronous Random Access Time : 70ns
- Burst Access Time :7ns (108Mhz)
‧ Page Mode Operation
8-Words Page access allows fast asychronous read Page Read Access Time : 20ns
‧ Burst Length :
- Continuous Linear Burst
- Linear Burst : 8-word & 16-word with Wrap
‧ Block Architecture
- Eight 4Kword blocks and one hundred twenty seven 32Kword blocks
- Bank 0 contains eight 4 Kword blocks and seven 32Kword blocks
- Bank 1~Bank 15 contain one hundred twenty 32Kword blocks
‧ Reduce program time using the VPP
‧ Support Single & Quad word accelerate program
‧ Power Consumption (Typical value, CL=30pF)
- Async/Sync burst Access Current : 24mA
- Program/Erase Current : 15mA
- Read While Program/Erase Current : 40mA
- Standby Mode/Auto Sleep Mode :15uA
‧ Block Protection/Unprotection
27
- Using the software command sequence
- Last two boot blocks are protected by WP=VIL
- All blocks are protected by VPP=VIL
‧ Handshaking Feature
- Provides host system with minimum latency by monitoring RDY
‧ Erase Suspend/Resume
‧ Program Suspend/Resume
‧ Unlock Bypass Program/Erase
‧ Hardware Reset (RESET)
‧ Data Polling and Toggle Bits
- Provides a software method of detecting the status of program