Page 1
1. EMITTER
2. BASE
3.
COLLECTOR
Features
Epitaxial planar die construction
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous 600 mA
Collector Power Dissipation 625 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
75 V
40 V
6 V
℃
℃
3DK2222A(NPN)
TO-92 Bipolar Transistors
TO-92
4.45
5.21
1.25MAX
1.14
1.40
MIN
4.32
5.33
6.35
MIN
12.7
2.92
MIN
Seating Plane
0.48
0.41
0.53
0.41
3.43
MIN
2.41
2.67
3.18
2.03
4.19
2.67
2.03
2.67
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
*
pulse test
CLASSIFICATION OF h
FE(1)
V
V
V
V
V
IC= 10uA , IE=0 75 V
(BR)CBO
*
IC= 10mA , IB=0 40 V
(BR)CEO
IE= 10uA, IC=0 6 V
(BR)EBO
VCB= 60 V , IE=0 10 nA
I
CBO
VCE= 60 V , V
I
CEX
VEB= 3 V , IC=0 10 nA
I
EBO
h
VCE=10 V, IC= 150mA 100 300
FE(1)
h
VCE=10 V, IC= 0.1mA 40
FE(2)
VCE=10 V, IC= 500mA 42
h
FE(3)
IC= 500mA, IB= 50mA 0.6 V
CE(sat)(1)
IC= 150mA, IB= 15mA 0.3 V
CE(sat)(2)
IC= 500mA, IB= 50mA 1.2 V
V
BE(sat)
10 ns
t
d
t
r
t
S
t
f
f
T
VCC=30V, IC=150mA
V
=-0.5V,IB1=15mA
225
BE(off)
VCC=30V, IC=150mA
I
=- IB2= 15mA
B1
VCE=20 V, IC=20mA,f =100MHz 300 MHz
=3V 10 nA
EB(OFF)
25
60
Rank
Range
L H
100-200 200-300
Page 2
Typical characteristics
3DK2222A(NPN)
TO-92 Bipolar Transistors
Page 3
3DK2222A(NPN)
TO-92 Bipolar Transistors
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