Page 1
3DD13009(NPN)
TO-220 Transistor
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
power switching applications
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
TO-220
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current -Continuous 12 A
Collector Power Dissipation 2 W
Junction Temperature 150
Storage Temperature -55-150
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
V
V
IC =1mA, IE=0 700 V
(BR)CBO
IC=10mA, IB=0 400 V
(BR)CEO
IE= 1mA, IC=0 9 V
(BR)EBO
VCB=700V,IE=0 100 µA
I
CBO
VCE=400V,IB=0 100 µA
I
CEO
VEB=9V, IC=0 100 µA
I
EBO
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
CLASSIFICATION OF
Rank
Range
h
FE
8-15 15-20 20-25 25-30 30-35 35-40
VCE=5V, IC=3A 8 40
h
FE
IC=8A,IB=1.6A 1.5 V
V
CE(sat)
IC=8A, IB=1.6A 1.6 V
V
BE(sat)
V
=10V,Ic=500mA,
f
T
0.9 µs
t
f
t
s
CE
f =1MHz
=8A, IB1=-IB2=1.6A
I
C
V
=125V
CC
4 MHz
4 µs
Page 2
3DD13009(NPN)
TO-220 Transistor
Typical Characteristics
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