Page 1
Features
3DD13007(NPN)
TO-220 Transistor
TO-220
1.BASE
2.COLLECTOR
3.EMITTER
3
2
1
power switching applications
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current -Continuous 8 A
Collector Power Dissipation 2 W
Junction Temperature 150
Storage Temperature -55-150
Dimensions in inches and (millimeters)
℃
℃
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Fall time
Storage time
CLASSIFICATION OF h
FE(1)
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
Cob
t
f
IC=0.5A 2.7 7.7 µs
t
s
= 1mA,IE=0 700 V
= 10mA,IB=0 400 V
= 1mA, IC =0 9 V
VCB= 700V, IE=0 1 mA
VCE= 400V, IB=0 100 µA
VEB= 9V, IC=0 100 µA
VCE= 5V, IC= 2 A 8 40
VCE=5V, IC=5A 5 30
I
=2A,IB=0.4A
C
=5A,IB=1A
I
C
I
=8A,IB=2A
C
I
=2A, IB= 0.4A
C
=5A,IB=1A
I
C
IC=500mA,VCE=10V,
f=1MH
Z
VCE=10V,IE=0,f=0.1MHz
VCC=125V, IC=5A
I
=-IB2=1A
B1
1 2
4 MH
0.7 µs
3
1.2
1.6
80
V
V
pF
Z
Rank
Range
8-15 15-20 20-25 25-30 30-35 35-40
Page 2
Typical Characteristics
3DD13007(NPN)
TO-220 Transistor
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