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3DD13005(NPN)
TO-220 Transistor
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
power switching applications
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage 700 V
CBO
V
Collector-Emitter Voltage 400 V
CEO
V
Emitter-Base Voltage 9 V
EBO
IC Collector Current -Continuous 4 A
PC Collector Power Dissipation 2 W
TJ
T
stg
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
TO-220
Dimensions in inches and (millimeters)
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE (sat)1IC
Collector-emitter saturation voltage
V
CE (sat)2IC
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
V
BE (sat)IC
f
T
t
t
s
VCE=10V, IC=500mA, f =1MHz 5 MHz
IB1=-IB2=0.4A, IC=2A, VCC=120V 0.6 µs
f
IC=0.25A 1.8 6.6 µs
= 1mA, IE=0 700 V
= 10mA, IB=0 400 V
= 1mA, IC=0 9 V
VCB= 700V, IE=0 1 mA
VCE= 400V, IB=0 0.1 mA
VEB=7V, IC=0 0.05 mA
VCE= 5V, IC= 1A 10 60
VCE= 5V, IC= 10mA 5
VCE= 5V, IC= 2A 8 40
=1A, IB=0.2A 0.3 V
=4A, IB=1A 0.8 V
=2A, IB=0.5A 1.6 V
CLASSIFICATION OF h
Rank
Range
10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60
FE1
Page 2
Typical Characteristics
3DD13005(NPN)
TO-220 Transistor
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