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Features
power switching applications
3DD13002(NPN)
TO-251/TO-252-2L Transistor
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS* T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector -Base Voltage 600 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 6 V
Collector Current -Continuous 1 A
Collector Power Dissipation 1.25 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted
A
TO-252-2L
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
I
CBO
CEO
IC= 100μA，IE=0
= 1mA，IB=0
I
C
IE= 100μA，IC=0
V
CB
V
CB
= 600V，IE=0
= 400V，IE=0
600 V
400 V
6
100 µA
100 µA
Emitter cut-off current
Dc current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
FE
CLASSIFICATION OF h
Range
1
9-15 15-20 20-25 25-30 30-35 35-40
I
EBO
h
VCE= 10 V, IC= 200mA 9 40
FE1
VCE= 10 V, IC= 0.25mA 5
h
FE2
(sat) IC=200mA, IB= 40mA 0.5 V
V
CE
(sat) IC=200mA, IB= 40mA 1.1 V
V
BE
f
T
0.5 µs
t
f
t
s
= 7V， IC=0
V
EB
V
=10V, IC=100mA
CE
f =1MHz
I
=1A, IB1=-IB2=0.2A
C
V
=100V
CC
100 µA
5 MHz
2.5 µs
Page 2
Typical characteristics
3DD13002(NPN)
TO-251/TO-252-2L Transistor
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