Page 1
2SD965A
SOT-89 Transistor(NPN)
1. BASE
1
2
3
Features
Audio amplifier
Flash unit of camera
Switching circuit
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
=25℃ unless otherwise noted)
A
2. COLLECTOR
3. EMITTER
40 V
30 V
7 V
5 A
750
150
-55-150
mW
℃
℃
SOT-89
4.6
1.5
4.4
0.48
0.35
1.8
1.4
0.53
0.40
2x)
3.0
0.44
0.37
1.6
1.4
0.8
MIN
B0.13
Dimensions in inches and (millimeters)
B
2.6
4.25
2.4
3.75
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Out capacitance
CLASSIFICATION OF h
FE(2)
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE’(2)
h
FE(3)
V
CE(sat)
VCE=6V, IC=50mA 150 MHz
f
T
Cob V
=0.1mA, IE=0 40 V
= 1mA. IB=0 30 V
= 10μA, IC=0 7 V
VCB= 10V,IE=0 0.1 μA
VEB=7V, IC=0 0.1 μA
VCE= 2 V, IC=1mA 200
VCE= 2V, IC = 500mA 230 800
VCE= 2V, IC =2A 150
IC=3A, IB=0.1A 1 V
=20 V , IE=0, f=1MHZ 50 pF
CB
Rank Q R S
Range
230-380 340-600 560-800
Page 2
Typical Characteristics
2SD965A
SOT-89 Transistor(NPN)
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