Page 1
2SD880(NPN)
TO-220 Transistor
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
Low frequency power amplifier
Complement to 2SB834
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC
PC
TJ
T
stg
Collector-Base Voltage
Emitter-Base Voltage 7 V
Collector Current -Continuous 3 A
Collector Power Dissipation 1.5 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
60 V
60 V
℃
℃
TO-220
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition Frequency
Collector output capacitance
Turn on time
Storage time
Fall time
V
V
V
IC=100µA, IE=0 60 V
(BR)CBO
IC=50mA, IB=0 60 V
(BR)CEO
IE= 100µA, IC=0 7 V
(BR)EBO
VCB=60V, IE=0 100 µA
I
CBO
VEB=7V, IC=0 100 µA
I
EBO
VCE=5V, IC=500mA 60 300
h
FE
IC=3A, IB=300mA 1 V
V
CE (sat)
I
V
BE
VCE=5 V, IC=500mA 3 MHz
f
T
VCB=10V, IE=0, f=1MHz 70 pF
C
ob
0.8 µs
t
on
1.5 µs
t
s
t
f
=0.5A, VCE= 5V 1 V
C
I
=-IB2=0.2A, IC=2A
B1
V
=30V, PW=20µs
CC
0.8 µs
CLASSIFICATION OF h
FE
Rank O Y GR
Range
60-120 100-200 150-300
Page 2
2SD880(NPN)
TO-220 Transistor
Typical Characteristics
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