Page 1
2SD879(NPN)
TO-92 Bipolar Transistors
1.
EMITTER
2.
COLLECTOR
BASE
3.
Features
In applications where two NiCd batteries are used to provide
2.4V, two 2SD879s are used.
The charge time is approximately 1 second faster Than that of
germanium transistors.
Less power dissipation because of low Collector-to-Emitter
Voltage V
Small package and large allowable collector dissipation (TO-92,
P
=750mW).
C
Large current capacity and highly resistant to break-down.
Excellent linearity of hFE in the region from low current to high
current. Power amplifier applications
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
V
IC
PC
TJ
T
CBO
CEO
CEX
EBO
stg
Collector-Base Voltage 30 V
Collector-Emitter Voltage
Emitter-Base Voltage 6 V
Collector Current –Continuous 3 A
Collector Power Dissipation 750 mW
Junction Temperature 150
Storage Temperature -55-150
, permitting more flashes of light to be emitted.
CE(sat)
=25℃ unless otherwise noted)
A
10 V
20 V
℃
℃
TO-92
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
*
PULSE TEST
Symbol Test conditions MIN TYP MAX UNIT
V
V
V
IC=10µA , IE=0 30 V
(BR)CBO
IC=1mA , VBE=3V 20
(BR)CEX
IC=10mA, IB=0 10 V
(BR)CEO
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
IE=10µA, IC=0 6 V
VCB=20V , IE=0 1 µA
VEB=4V , IC=0 1 µA
*
*
IC=3A, IB=60mA 0.4 V
=2V, IC=3A 140
V
CE
VCE=10V, IC=50mA
VCB=10V,f=1MHz 30 pF
200
V
MHz
Page 2
Typical Characteristics
2SD879(NPN)
TO-92 Bipolar Transistors
Page 3
2SD879(NPN)
TO-92 Bipolar Transistors
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