Page 1
2SD400
4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
TO-92MOD Transistor (NPN)
1
2
3
1. EMITTER
2.
COLLECTOR
3.
BASE
Features
Low-Frequency power Amp, Electronic Governor Applications
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage 25 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 5 V
Collector Current -Continuous 1 A
Collector Power Dissipation 0.9 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
TO-92MOD
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
IC=10µA, IE=0 25
IC=1mA, IB=0 25
IE=10µA, IC=0 5
=20V, IE=0
V
CB
=4V, IC=0
V
EB
=2V, IC=50mA 60
V
CE
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
CLASSIFICATION OF h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
VCE=10V, IC=50mA
T
Cob V
=2V, IC=1A 30
V
CE
=500mA, IB=50mA
I
C
=500mA, IB=50mA
I
C
=10V, f=1MHz
CB
Rank D E F G
Range
60-120 100-200 160-320 280-560
V
V
V
560
1
1
µA
µA
0.3
1.2
V
V
180 MHz
15 pF
Page 2
2SD400
TO-92MOD Transistor (NPN)
Typical Characteristics
Loading...