Page 1
2SD313(NPN)
TO-220 Transistor
1. BASE
2. COLLECTOR
3. EMITTER
3
2
Features
Low Collector-Emitter Saturation Voltage
Vce(sat)=1V(MAX)@I
DC Current Gain hFE=40~320@IC=1A
Complementray to PNP 2SB507
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC
PC
TJ
T
stg
Collector-Base Voltage
Emitter-Base Voltage 5 V
Collector Current -Continuous 3 A
Collector Power Dissipation 1.75 W
Junction Temperature 150
Storage Temperature -55-150
1
=2A,IB=0.2A
C
=25℃ unless otherwise noted)
A
60 V
60 V
℃
℃
TO-220
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
CEO
I
EBO
h
FE(1)
=100μA, IE=0 60 V
=1mA, IB=0 60 V
=100μA, IC=0 5 V
VCB=60V, IE=0 100 μA
VCE=60V, IE=0 1 mA
VEB=4V, IC=0 100 μA
VCE=2V, IC=1A 40 320
DC current gain
h
VCE=2V, IC=0.1A 40
FE(2)
IC=2A, IB=200mA 1 V
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
VCE=2V, IC=1A 1.5 V
V
BE
VCE=5V, IC=500mA 8 MHz
f
T
VCB=10V, IE=0,f=1MHz 65 pF
C
ob
CLASSIFICATION OF h
FE(1)
Rank C D E F
Range
40-80 60-120 100-200 160-320
Page 2
2SD313(NPN)
TO-220 Transistor
Typical Characteristics
Typical Characteristics
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