Page 1
1
2
3
Features
High collector to base voltage V
High collector to emitter voltage V
Large collector power dissipation P
Low collector to emitter saturation voltage V
Marking:1S
CBO
CEO
C
2SD2413
SOT-89 Transistor(NPN)
1.
BASE
COLLECTOR
2.
EMITTER
3.
1.6
1.4
CE(sat)
0.44
0.37
Dimensions in inches and (millimeters)
SOT-89
0.8
MIN
B0.13
1.5
4.6
4.4
0.48
0.35
1.8
1.4
0.53
0.40
2x)
3.0
B
2.6
4.25
2.4
3.75
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 5 V
Collector Current -Continuous 100 mA
Collector Power Dissipation 500 mW
Junction Temperature 150
Storage Temperature -55-150
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
400 V
400 V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
=100μA, IE=0 400 V
=0.5mA, IB=0 400 V
=100μA, IC=0 5 V
VCB=400V, IE=0 50 μA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VEB=5V, IC=0 50 μA
I
EBO
VCE=5V, IC=30mA 30
h
FE
IC=50mA, IB=5mA 1.5 V
V
CE(sat)
IC=50mA, IB=5mA 1.5 V
V
BE(sat)
VCE=30V, IC=20mA, f=200MHz 40 MHz
f
T
VCB = 30V, IE=0, f=1MHz 7 pF
C
ob
Page 2
2SD2413
SOT-89 Transistor(NPN)
Typical Characteristics
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