Page 1
2SD2150
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89 Transistor(NPN)
Features
Excellent current-to-gain characteristics
Low collector saturation voltage V
V
=0.5V(max) for IC/IB=2A/0.1A
CE(sat)
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage 40 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 6 V
Collector Current -Continuous 3 A
Collector Power Dissipation 500 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
CE(sat)
℃
℃
SOT-89
1.5
4.6
4.4
0.48
0.35
1.8
1.4
0.53
0.40
2x)
3.0
B
2.6
4.25
2.4
3.75
1.6
1.4
0.8
MIN
0.44
0.37
Dimensions in inches and (millimeters)
B0.13
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage V
Transition frequency
Collector output capacitance
V
V
V
IC =50uA, IE=0 40 V
(BR)CBO
IC =1mA, IB=0 20 V
(BR)CEO
IE=50μA, IC=0 6 V
(BR)EBO
VCB=30V, IE=0 0.1 μA
I
CBO
VEB=5V, IC=0 0.1 μA
I
EBO
VCE=2V, IC=100mA 180 560
h
FE *
=2A, IB=100mA 0.5 V
I
*
CE(sat)
f
T*
C
ob
C
V
=2V,IC=500mA
CE
f=100MHz
290 MHz
VCB=10V, IE=0, f=1MHz 25 pF
*Pulse test: tp≤300μS, δ≤0.02.
h
CLASSIFICATION OF
Rank
Range
FE
R S
180-390 270-560
Marking
CFR CFS
Page 2
Typical Characteristics
2SD2150
SOT-89 Transistor(NPN)
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