Page 1
2SD2137(NPN)
TO-220F Bipolar Transistors
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Features
High forward current transfer ratio hFE which has
satisfactory linearity
Low collector to emitter saturation voltage V
Allowing supply with the radial taping
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC
PC
TJ
T
stg
Collector-Base Voltage
Emitter-Base Voltage 6 V
Collector Current -Continuous 3 A
Collector Power Dissipation 2 W
Junction Temperature 150
Storage Temperature -55-150
CE(sat)
60 V
60 V
℃
℃
TO-220F
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Turn-on time
Switch time
Storage time
Fall time
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
VCE=5V, IC=0.2A, f=10MHz 30 MHz
f
T
0.3 µs
t
on
2.5 µs
t
stg
tf
=0.1mA, IE=0 60 V
=30mA, IB=0 60 V
=0.1mA, IC=0 6 V
VCB=60V, IE=0 100 µA
VCE=30V, IB=0 100 µA
VEB=6V, IC=0 100 µA
VCE=4V, IC=1A 70 320
VCE=4V, IC=3A 10
IC=3A, IB=375mA 1.2 V
VCE=4V, IC=3A 1.8 V
=50V,IC=1A, IB1=-IB2=0.1A
V
CC
0.2 µs
CLASSIFICATION OF h
FE(1)
Rank Q P O
Range
70-150 120-250 160-320
Page 2
2SD2137(NPN)
TO-220F Bipolar Transistors
Typical Characteristics
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