LG 2sd2137 Datasheet

Page 1
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
High forward current transfer ratio h Low collector to emitter saturation voltage V
Allowing supply with the radial taping
which has satisfactory linearity
FE
CE(sat)
2SD2137(NPN)
TO-220 Transistor
TO-220
MAXIMUM RATINGS(T
=25℃ unless otherwise noted)
Symbol Parameter Value Units
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC PC TJ T
stg
Collector-Base Voltage
Emitter-Base Voltage 6 V Collector Current -Continuous 3 A Collector Power Dissipation 2 W Junction Temperature 150 Storage Temperature -55-150
60 V 60 V
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage
Collector-emitter breakdown voltage Emitter-base breakdown voltage
Collector cut-off current Emitter cut-off current
DC current gain
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE(2)
=0.1mA, IE=0 60 V =30mA, IB=0 60 V
=0.1mA, IC=0 6 V VCB=60V, IE=0 100 μA VEB=6V, IC=0 100 μA
VCE=4V, IC=1A 70 320 VCE=4V, IC=3A 10
IC=3A, IB=375mA 1.2 V
Collector-emitter saturation voltage Base-emitter voltage Transition frequency
Turn-on time
Switch time
Storage time Fall time
CLASSIFICATION OF h
FE(1)
V
CE(sat)
VCE=4V, IC=3A 1.8 V
V
BE
VCE=5V, IC=0.2A, f=10MHz 30 MHz
f
T
0.3 μs
t
on
V
2.5 μs
t
stg
t
f
=50V,IC=1A, IB1=-IB2=0.1A
CC
0.2 μs
Rank Q P O
Range
70-150 120-250 160-320
Page 2
2SD2137(NPN)
TO-220 Transistor
Typical Characteristics
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