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Features
Low saturation voltage
Excellent DC current gain characteristice
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
2SD2061(NPN)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
Symbol Paramenter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current -Continuous 3 A
Collector Power Dissipation 2 W
Junction Temperature 150
Storage Temperature Range -55-150
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
=50µA, IE=0 80 V
=1mA, IB=0 60 V
=50µA, IC=0 5 V
VCB=60V, IE=0 10 µA
VEB=4V, IC=0 10 µA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE=5V, IC=0.5A 100 320
h
FE(1)
IC=2A, IB=0.2A 1 V
V
CE(sat)
IC=2A, IB=0.2A 1.5 V
V
BE(sat)
VCE=5V, IC=0.5A, f=5MHz 8 MHz
f
T
VCB=10V, IE=0, f=1MHz 70 pF
C
ob
Page 2
Typical Characteristics
2SD2061(NPN)
TO-220 Transistor
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