Page 1
1.BASE
2.COLLECTOR
3.EMITTER
1 2 3
Features
Adoption of FBET,MBIT processes
Large current capacity and wide ASO
Low collector-to-emitter saturation voltage
Fast switching speed
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 6 V
Collector Current –Continuous 3 A
Collector Power Dissipation 1 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
2SD1802(NPN)
TO-251/TO-252-2L Transistor
TO-251
TO-252-2L
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBO
V
(BR)CEOIC
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
C
IC =10µA, IE=0
=1mA, IB=0 50 V
IE=10µA, IC =0
VCB=40V, IE=0 1
VEB=4V, IC=0 1
VCE=2V, IC=100mA 100 560
VCE=2V, IC=3A 35
IC=2A, IB=100mA 0.5 V
IC=2A, IB=100mA 1.2 V
VCE=10V, IC=50mA 150 MHz
T
VCB=10V, IE=0, f=1MHz 25 pF
ob
60 V
6 V
µA
µA
CLASSIFICATION OF h
Rank
Range
FE(1)
R S T U
100-200 140-280 200-400 280-560
Page 2
Typical Characteristics
2SD1802(NPN)
TO-251/TO-252-2L Transistor
Page 3
2SD1802(NPN)
TO-251/TO-252-2L Transistor
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