Page 1
1. BASE
2. COLLECTOR
1 2 3
3. EMITTER
Features
Low collector saturation voltage:
=0.3V(Typ.),IC/IB=2A/0.2A
V
ce(sat)
Excellent current characteristics of DC current gain.
Large collector power dissipation: PC=30W(TC=25℃)
Complementary pair with 2SB1187
2SD1761(NPN)
TO-220F Bipolar Transistors
TO-220F
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
V
V
V
IC
pC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous 3 A
Collector Power dissipation 2 W
Junction Temperature 150
Storage Temperature -55-150
80 V
60 V
5 V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
=50uA, IE=0 80 V
=1mA,IB=0 60 V
=50uA,IC=0 5 V
VCB=60V,IE=0 10 uA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE(1)
Rank
Range
VEB=4V,IC=0 10 uA
I
EBO
VCE=5V,IC=0.5A 60 320
h
FE(1)
IC=2A,IB=0.2A 1 V
V
CE(sat)
IC=2A,IB=0.2A 1.5 V
V
BE(sat)
VCE=5V,IC=0.5A 8 MHz
f
T
VCB=10V,IE=0,f=1MHz 90 pF
C
ob
D E F
60-120 100-200 160-320
Page 2
Typical Characteristics
2SD1761(NPN)
TO-220F Bipolar Transistors
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