Page 1
2SD1760(NPN)
TO-251/TO-252-2L Transistor
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Features
Low V
Complements the 2SB1184.
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC
TJ
T
stg
CE(sat)
. V
= 0.5V (Typ.) (IC/IB = 2A / 0.2A)
CE(sat)
=25 unless otherwise noted℃ )
A
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current -Continuous
3 A
Collector Power Dissipation 1.5 W
Junction Temperature
Storage Temperature
150
-55 to +150
℃
℃
TO-251
TO-252-2L
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE(1)
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
VCE=5V, IC=500mA,f=30MHz 90 MHz
f
T
C
ob
Rank P Q R
Range
82-180 120-270 180-390
=50μA, IE=0 60 V
=1mA, IB=0 50 V
=50μA, IC=0 5 V
VCB=40V, IE=0 1 μA
VEB=4V, IC=0 1 μA
VCE=3V, IC=500mA 82 390
IC=2A, IB=200mA 1 V
VCB=10V, IE=0, f=1MHz 40 pF
Marking
Page 2
2SD1760(NPN)
TO-251/TO-252-2L Transistor
Typical Characteristics
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