Page 1
2SD1616A(NPN)
TO-92 Bipolar Transistors
1. EMITTER
COLLECTOR
2.
BASE
3.
Features
Power dissipation
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage 120 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 6 V
Collector Current -Continuous 1 A
Collector Power Dissipation 750 mW
Junction Temperature 150
Storage Temperature -55 to150
V
V
PC
T
CBO
CEO
EBO
IC
Tj
stg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
=25℃ unless otherwise noted)
A
℃
℃
Dimensions in inches and (millimeters)
TO-92
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Transition frequency
Output capacitance
Turn on time
Storage time
Fall time
V
V
V
IC= 10μA , IE=0 120 V
(BR)CBO
IC= 2mA , IB=0 60 V
(BR)CEO
IE= 10μA, IC=0 6 V
(BR)EBO
VCB=60V, IE=0 0.1 μA
I
CBO
VEB=6V, IC=0 0.1 μA
I
EBO
h
VCE=2 V, IC= 100mA 135
FE1
h
VCE=2 V, IC= 1A 81
FE2
IC= 1A, IB=50mA 0.3 V
V
CE(sat)
IC= 1A, IB=50mA 1.2 V
V
BE(sat)
VCE= 2V, IC=50mA 0.6 0.7 V
V
BE
VCE=2 V, IC= 100mA 100
f
T
VCB=10 V,IE= 0, f=1MHz
C
ob
0.07 μs
t
on
S
t
F
=-IB2=10mA
I
B1
Vcc=10V, I
0.95 μs
t
=100mA,
C
0.07 μs
600
MHz
19 pF
*pulse test: PW≤350µS, δ≤2%.
CLASSIFICATION OF h
FE1
Rank L K U
Range
135-270 200-400 300-600
Page 2
2SD1616A(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
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