Page 1
2SD1499(NPN)
TO-220F Bipolar Transistors
1. BASE
2. COLLECTOR
1 2 3
3. EMITTER
Features
Extremely satisfactory linearity of the forward current transfer
ratio h
Wide safe operation area
High transition frequency f
Full-pack package which can be installed to the heat sink with
one screw.
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC
TJ
T
stg
FE
T
=25℃ unless otherwise noted)
A
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current -Continuous 5 A
Collector Power Dissipation 2 W
Junction temperature 150
Storage Temperature -55to+150
℃
℃
TO-220F
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
CLASSIFICATION OF h
FE2
V
(BR)CBO
V
(BR)CEOIC
V
(BR)EBO
I
CEO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
C
f
IC=100μA,IE=0
=10mA,IB=0 100 V
IE=100μA,IC=0
VCE=50V,IB=0 50 µA
VCB=100V,IE=0 50 µA
VEB=3V,IC=0 50 µA
VCE=5V,IC=20mA 20
VCE=5V,IC=1A 60 200
VCE=5V,IC=3A 20
IC=3A,IB=0.3A 2 V
VCE=5V,IC=3A 1.8 V
BE
VCB=10V,IE=0,f=1MHz 90 pF
ob
VCE = 5 V, IC = 0.5 A, f = 1 MHz 20 MHz
T
100 V
5 V
Rank Q P
Range
60-120 100-200
Page 2
Typical Characteristics
2SD1499(NPN)
TO-220F Bipolar Transistors
Loading...