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2SD1468(NPN)
TO-92 Bipolar Transistors
1.
EMITTER
2.
COLLECTOR
BASE
3.
Features
MAXIMUM RATINGS (T
V
V
V
IC
PC
Tj
T
Low saturation voltage
Ideal for low voltage, high current dribes
High DC current gain and high current
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous 1 A
Collector power dissipation 625 W
Junction Temperature 150
Storage Temperature -55-150
30 V
15 V
5 V
℃
℃
Dimensions in inches and (millimeters)
TO-92
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE
V
CE(sat)
VCE=5V, IC=50mA, f=100MHz 50 MHz
f
T
C
ob
=50μA, IE=0 30 V
=1mA, IB=0 15 V
=50μA, IC=0 5 V
VCB=20V, IE=0 0.5 μA
VEB=4V, IC=0 0.5 μA
VCE=3V, IC=100mA 120 560
IC=500mA, IB=50mA 0.4 V
VCB=10V, IE=0, f=1MHz 30 pF
CLASSIFICATION OF h
FE
Rank Q R S
Range 120-270 180-390 270-560
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Typical Characteristics
2SD1468(NPN)
TO-92 Bipolar Transistors
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