Page 1
BASE
1.
COLLECTOR
1
2
3
2.
EMITTER
3.
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory operation performances at high efficiency with the low
voltage power supply.
2SD1119
SOT-89 Transistor(NPN)
SOT-89
4.6
1.5
4.4
0.48
0.35
1.8
1.4
0.53
0.40
2x)
3.0
0.44
0.37
1.6
1.4
0.8
MIN
B0.13
B
2.6
4.25
2.4
3.75
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector- Base Voltage 40 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 7 V
Collector Current -Continuous 3 A
Collector Dissipation 500 mW
Junction Temperature 150
Storage Temperature -55-150
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
(BR)CBO
V
(BR)CEOIC
V
(BR)EBO
IC =100μA, IE=0
=1mA, IB=0 25 V
IE=10μA, IC=0
40 V
7 V
VCB=10V, IE=0 0.1
Collector cut-off current
Emitter cut-off current
I
CBO
VEB=6V, IC=0 0.1
I
EBO
h
VCE=2V, IC=500mA 230 600
FE(1)
μA
μA
DC current gain
VCE=2V, IC=2A 150
h
FE(2)
IC=3A, IB=0.1A 1 V
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE(1)
V
CE(sat)
VCE=6V, IC=50mA, f=200MHz 150 MHz
f
T
VCB=20V, f=1MHz 50 pF
C
ob
Rank Q R
Range
Marking
230-380 340-600
TQ TR
Page 2
Typical Characteristics
2SD1119
SOT-89 Transistor(NPN)
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