Page 1
2SC5345
SOT-23 Transistor(NPN)
BASE
1.
EMITTER
2.
COLLECTOR
3.
Features
RF amplifier
High current transition frequency fT=550MHz(Typ.),
CE=6V, IE=-1mA]
[V
Low output capacitance :
ob=1.4pF(Typ.) [VCB=6V, IE=0]
C
Low base time constant and high gain
Excellent noise response
Marking: 5345
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage 30
Collector-Emitter Voltage 20
Emitter-Base Voltage 4
Collector Current 20 mA
Collector Power dissipation 300 mW
Junction Temperature 150
Storage Temperature -55-150
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
=25℃ unless otherwise noted)
A
V
V
V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Dimensions in inches and (millimeters)
SOT-23
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
C
IC=10μA, IE=0
IC=5mA, IB=0
IE=10μA, IC=0
VCB=30V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
FE
IC=10mA, IB=1mA
VCE=6V, IC=1mA
f
T
VCB=6V, IE=0, f=1MHz
ob
30 V
20 V
4 V
0.5 μA
0.5 μA
40 240
0.3 V
550 MHz
1.4 pF
CLASSIFICATION OF h
FE
Rank R O Y
Range
40-80 70-140 120-240
Page 2
2SC5345
SOT-23 Transistor(NPN)
Typical characteristics
Loading...