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2SC5344(NPN)
TO-92 Bipolar Transistors
1.
EMITTER
2.
COLLECTOR
BASE
3.
Features
Audio power amplifier application
High hFE : hFE=100~320
Complementary to 2SA1981
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage 35 V
CBO
V
Collector-Emitter Voltage 30 V
CEO
V
Emitter-Base Voltage 5 V
EBO
=25℃ unless otherwise noted)
A
Dimensions in inches and (millimeters)
TO-92
IC Collector Current -Continuous 800 mA
PC Collector Power Dissipation 625 mW
Tj Junction Temperature 150 ℃
T
Storage Temperature -55-150 ℃
stg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified )
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol Test conditions MIN TYP MAX UNIT
V
V
V
IC = 0.1mA, IB=0 35 V
(BR)CBO
IC = 10mA, IB=0 30 V
(BR)CEO
IE= 0.01mA, IC=0 5 V
(BR)EBO
VCB=35V , IE=0 0.1 μA
I
CBO
VEB= 5V, IC=0 0.1 μA
I
EBO
VCE=1V, IC= 100mA 100 320
h
FE
IC= 500mA, IB=50mA 0.5 V
V
CE(sat)
Transition frequency
Collector Output Capacitance
CLASSIFICATION OF h
Rank
Range
FE
V
f
T
Cob
=5V, IC=10mA 120 MHz
CE
VCB=10V,IE= 0,f=1MHz 13 pF
O Y
100-200 160-320
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Typical Characteristics
2SC5344(NPN)
TO-92 Bipolar Transistors
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