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2SC4617
SOT-523 Transistor(NPN)
BASE
1.
2. EMITTER
COLLECTOR
3.
SOT-523
Features
Low Cob:Cob=2.0pF(Typ)
Complement to 2SA1774
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 7 V
Collector Current -Continuous 150 mA
Collector Power Dissipation 150 mW
Junction Temperature 150
Storage Temperature -55-150
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE
V
CE(sat)
VCE=12V, IC=2mA, f=100MHz 180 MHz
f
T
C
ob
=50uA, IE=0 60 V
=1mA, IB=0 50 V
=50uA, IC=0 7 V
VCB=60V, IE=0 0.1 μA
VEB=7V, IE=0 0.1 μA
VCE=6V, IC=1mA 120 560
IC=50mA, IB=5mA 0.4 V
VCB=12V, IE=0, f=1MHz 3.5 pF
CLASSIFICATION OF hFE
Rank
Q R
S
Range
Marking
120-270 180-390
BQ BR
270-560
BS
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Typical characteristics
2SC4617
SOT-523 Transistor(NPN)
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