Page 1
1
2
3
Features
Low V
CE(sat).VCE(sat)
Excellent current gain characteristics.
Complements to 2SA1585
= 0.2V (Typ.)(IC / IB = 2A / 0.1A)
1. BASE
2. COLLECTOR
3. EMITTER
2SC4115
SOT-89 Transistor(NPN)
SOT-89
4.6
1.5
4.4
0.48
0.35
1.8
1.4
0.53
0.40
2x)
3.0
1.6
1.4
0.8
MIN
0.44
0.37
B0.13
Dimensions in inches and (millimeters)
B
2.6
4.25
2.4
3.75
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous 3 A
Collector Power Dissipation 500 mW
Junction Temperature 150
Storage Temperature -55-150
40 V
20 V
6 V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
I
(BR)CBO
I
(BR)CEO
I
(BR)EBO
V
I
CBO
C
C
E
= 50μA, IE=0 40 V
=1mA , IB=0 20 V
=50μA, IC=0 6 V
=30V, IE=0 0.1 μA
CB
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
Transition frequency
V
I
EBO
V
h
FE
I
V
CEsat
f
T
CE
= 2A, IB=0.1A 0.5 V
C
VCE=2V, IC=0.5 A
= 5V, IC=0 0.1 μA
EB
=2V, IC= 0.1A 120 560
F=100MHz
200 290 MHz
*pulse test
CLASSIFICATION OF h
Rank Q R S
Range
marking
FE
120-270 180-390 270-560
4115Q 4115R 4115S
Page 2
Typical characteristics
2SC4115
SOT-89 Transistor(NPN)
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