Page 1
2SC388(NPN)
TO-92 Bipolar Transistors
1. EMITTER
2.
COLLECTOR
BASE
3.
Features
TV final pictureif amplifier applications
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
Collector-Emitter Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 4 V
IC Collector Current -Continuous 50 mA
Pc Collector Power dissipation 300 mW
Tj Junction Temperature 150
T
Storage Temperature -55-150
stg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
=25℃ unless otherwise noted)
A
Symbol Test conditions MIN TYP MAX UNIT
Dimensions in inches and (millimeters)
℃
℃
TO-92
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Power Gain
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
f
C
Gpe
Ic=10μA,IE=0 30
Ic=5mA,IB=0 25
IE=10μA,IC=0 4
VCE=12.5V,IC=12.5mA
T
ob
=30V,IE=0
V
CB
=3V,IC=0
V
EB
=12.5V,IC=12.5mA 20
V
CE
=15mA,IB=1.5mA
I
C
=15mA,IB=1.5mA
I
C
=10V,IE=0,f=1MHz
V
CB
=12.5V,IE=-12.5mA,
V
CC
f=45MHZ
V
V
V
200
0.1
0.1
0.2
1.2
μA
μA
V
V
300 MHz
0.8 2 pF
28 36 dB
Page 2
Typical Characteristics
2SC388(NPN)
TO-92 Bipolar Transistors
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