Page 1
2SC2785
TO-92S Transistor (NPN)
1. EMITTER
2. COLLECTOR
1 2 3
3. BASE
Features
High voltage V
Excellent hFE Linearity:0.92 TYP h
Complementary to 2SA1175 PNP transistor
MAXIMUM RATINGS (T
Symbol
V
CBO
V
CEO
V
EBO
IC
PC
TJ
T
stg
:50V
CEO
(0.1mA)/ h
FE1
=25℃ unless otherwise noted)
A
Parameter
Collector-Base Voltage
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current -Continuous 0.1 A
Collector Power Dissipation 0.25 W
Junction Temperature 150
Storage Temperature -55-150
(1mA)
FE2
Value Units
60 V
℃
℃
TO-92S
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
VCE=6V, IC=10mA 150 MHz
f
T
C
ob
NF V
=100μA, IE=0 60 V
=1mA, IB=0 50 V
=100μA, IC=0 5 V
VCB=60V, IE=0 0.1 μA
VEB=5V, IC=0 0.1 μA
VCE=6V, IC=1mA 110 600
VCE=6V, IC=0.1mA 50
IC=100mA, IB=10mA 0.3 V
IC=100mA, IB=10mA 1 V
VCE=6V, IC=1mA 0.65 V
VCB=6V, IE=0,f=1MHz 4 pF
=6V, Ic=0.1mA,f=1KHZ, Rg=2KΩ 15 dB
CE
CLASSIFICATION OF h
FE(1)
Rank RF JF HF FF EF KF
Range
110-180 135-220 170-270 200-320 250-400 300-600
Page 2
Typical Characteristics
2SC2785
TO-92S Transistor (NPN)
Page 3
2SC2785
TO-92S Transistor (NPN)
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