
Features
4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
Low saturation voltage: V
High speed switching time: t
Complementary to 2SA1020
1
2
3
=0.5V(Max)(IC=1A)
CE(sat)
=1μs(Typ.)
stg
1.EMITTER
2.COLLECTOR
3.BASE
2SC2655
TO-92MOD Transistor (NPN)
TO-92MOD
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Symbol Parameter Symbol Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current –Continuous 2 A
Collector Power Dissipation 0.9 W
Junction Temperature 150
Storage Temperature -55-150
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Switch time
CLASSIFICATION OF h
Tune on Time
Storage Time
Fall Time
FE
(1)
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
VCE=2V,IC=0.5A 100 MHz
f
T
C
ob
0.15
t
on
2
t
stg
t
f
=100μA,IE=0 50 V
=10mA,IB=0 50 V
=100μA,IC=0 5 V
VCB=50V,IE=0 1 μA
VEB=5V,IC=0 1 μA
VCE=2V,IC=500mA 70 240
VCE=2V,IC=1.5A 40
IC=1A,IB=0.05A 0.5 V
IC=1A,IB=0.05A 1.2 V
VCB=10V,IE=0,f=1MHz 30 pF
V
=30V,Ic=1A,
CC
I
=-IB2=0.05A
B1
Dimensions in inches and (millimeters)
μs
0.15
Rank
Range
O Y
70-140 120-240

Typical Characteristics
2SC2655
TO-92MOD Transistor (NPN)

2SC2655
TO-92MOD Transistor (NPN)