Page 1
2SC2482
4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
TO-92MOD Transistor (NPN)
1
2
3
1. EMITTER
2. COLLECTOR
3. BASE
Features
High voltage :Vceo=300V
Small collector output capacitance: Cob=3.0pF(Typ)
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage 300 V
Emitter-Base Voltage 7 V
Collector Current -Continuous 0.1 A
Collector Power Dissipation 0.9 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
300 V
℃
℃
TO-92MOD
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
Rank
Range
FE
V(BR)
V(BR)
V(BR)
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
Cob V
IC= 100μA, IE=0 300 V
CBO
IC= 3mA ,IB=0 300 V
CEO
IE= 100μA,IC=0 7 V
EBO
V
V
V
V
I
I
V
T
= 240 V, IE=0 1.0 μA
CB
= 220 V, IB=0 5.0 μA
CB
= 7V, IC=0
EB
=10V, IC=20mA 30 150
CE
= 10mA, IB=1mA 1.0 V
C
=10mA, IB=1mA 1.0 V
C
=10V, IC=20mA,f=30MHz 50
CE
=20V, IE=0, f=1MHz
CB
O Y
30-90 90-150
3
1.0 μA
MHz
pF
Page 2
Typical characteristics
2SC2482
TO-92MOD Transistor (NPN)
Page 3
2SC2482
TO-92MOD Transistor (NPN)
Loading...