Page 1
2SC2383
4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
TO-92MOD Transistor (NPN)
TO-92MOD
2
3
EMITTER
1
1.
COLLECTOR
2.
BASE
3.
Features
High voltage: V
Large continuous collector current capability
Complementary to 2SA1013
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC
PC
TJ
T
stg
Collector-Base Voltage
Emitter-Base Voltage 6 V
Collector Current -Continuous 1 A
Collector Power Dissipation 0.9 W
Junction Temperature 150 ℃
Storage Temperature -55 to +150 ℃
=160V
CEO
=25 unless otherwise noted℃ )
A
Dimensions in inches and (millimeters)
160 V
160 V
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
CLASSIFICATION OF h
Rank
Range
FE1
60-120 100-200 160-320
Symbol Test conditions MIN MAX UNIT
V(BR)
V(BR)
V(BR)
I
CBO
I
CER
I
EBO
h
h
V
V
f
IC= 100μA , IE=0 160 V
CBO
IC= 10mA, IB=0 160 V
CEO
IE= 10μA, IC=0 6 V
EBO
V
V
V
V
FE1
V
FE2
I
CE(sat)
I
BE
V
T
=150V, IE=0 1 μA
CB
=150V,REB= 10MΩ 10 μA
CB
=6V, IC=0 1 μA
EB
=5V, IC=200mA 60 320
CE
=5V, IC=10mA 40
CE
=500m A, IB=50mA 1 V
C
=5mA, VCE= 5V 0.75 V
C
=5V, IC=200mA 20 MHz
CE
R O Y
Page 2
Typical characteristics
2SC2383
TO-92MOD Transistor (NPN)
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