Page 1
2SC2230/2SC2230A
4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
TO-92MOD Transistor (NPN)
1. EMITTER
1
2
3
2. COLLECTOR
3. BASE
Features
High voltage: V
High DC Current Gain
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage
Collector-Emitter Voltage 2SC2230
2SC2230A
Emitter-Base Voltage 5 V
Collector Current -Continuous 0.1 A
Collector Power Dissipation 0.8 W
Junction Temperature 150
Storage Temperature -55 to +150
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
=180V(2SC2230A)
CEO
=25℃ unless otherwise noted)
A
200 V
160
180
V
℃
℃
TO-92MOD
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
Rank Y GR
Range
FE1
V
V
V
120-240 200-400
IC= 100µA , IE=0 200 V
(BR)CBO
I
= 10 mA, IB=0 2SC2230
C
(BR)CEO
IE= 10µA, IC =0 5 V
(BR)EBO
VCB=200V, IE=0 0.1 µA
I
CBO
VEB=5V, IC=0 0.1 µA
I
EBO
V
h
（
FE
VCE=10 V, IC= 50mA 80
h
FE2
IC= 50m A, IB= 5mA 0.5 V
V
CE(sat)
I
V
BE
f
T
VCB=10V,IE=0,f=1MHz 7 pF
C
ob
=10 V, IC= 10mA 120 400
CE
= 1 mA, VCE= 10V 0.5 0.7 V
C
V
= 10 V, IC= 10mA 50 MHz
CE
2SC2230A
160
180
V
Page 2
Typical Characteristics
2SC2230/2SC2230A
TO-92MOD Transistor (NPN)
Page 3
2SC2230/2SC2230A
TO-92MOD Transistor (NPN)
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