Page 1
Features
Amplifier dissipation NPN Silicon
1.
BASE
2.
EMITTER
3.
COLLECTOR
2SC2216(NPN)
TO-92 Bipolar Transistors
TO-92
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC Collector Dissipation 300 mW
TJ
T
stg
Collector-Base Voltage 50 V
Collector-Emitter Volta ge 45 V
Emitter-Base Voltage 4 V
Collector Current -Continuous 50 mA
Junction Temperature 125
Storage Temperatu re -55-125
=25℃ unless otherwise noted)
A
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Bass-emitter saturation voltage
Transition frequency
Collector output capacitance
V
V
V
IC= 100μA, IE=0 50 V
(BR)CBO
IC= 10 mA , IB=0 45 V
(BR)CEO
IE= 100μA, IC=0 4 V
(BR)EBO
VCB=50 V IE=0 0.1 μA
I
CBO
VEB= 3 V, IC=0 0.1 μA
I
EBO
VCE=12.5V, IC=12.5 mA 40 140
h
FE
IC= 15mA, IB=1.5 mA 0.2 V
V
CE (sat)
IC= 15mA, IB=1.5 mA 1.5 V
V
BE (sat)
VCE=12.5 V, IC=12.5mA 300 MHz
f
T
V
=10V,IE=0,
C
ob
CB
f=30MHz
2.0 pF
Page 2
Typical Characteristics
2SC2216(NPN)
TO-92 Bipolar Transistors
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