Page 1
g
2SC2060
3.700
4.100
1.280
1.580
0.350
0.550
0.600
0.800
0.350
0.450
4.700
5.100
4.000
7.800
8.200
2.440
2.640
13.800
14.200
1.600
0.000
0.300
1.270 TYP
TO-92L Transistor (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
3
2
1
Features
Power dissipation P
Low saturation voltage (V
Complementary pair with 2SA934
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
st
Collector-base voltage 40 V
Collector-Emitter Voltage 32 V
Emitter-Base Voltage 5 V
Collector Current -Continuous 1 A
Collector Power Dissipation 750 mW
Junction Temperature 150
Storage Temperature -55-150
: 0.75 W (Tamb=25℃)
CM
CE(sat)
=25℃ unless otherwise noted)
A
=0.15V at 500mA)
℃
℃
TO-92L
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)
V(BR)
V(BR)
V
IC= 100μA , IE=0 40 V
CBO
IC= 1mA , IB=0 32 V
CEO
IE= 100μA, IC=0 5 V
EBO
VCB=20V , IE=0 0.5 μA
I
CBO
VEB=4V , IC=0 0.1 μA
I
EBO
VCE=3V, IC= 100mA 80 400
h
FE
IC= 500m A, IB= 50mA 0.4 V
CE(sat)
V
f
T
VCB=10V,IE=0,f=1MHz 30 pF
C
ob
=5V, IE=-50mA 50 MHz
CE
Page 2
2SC2060
TO-92L Transistor (NPN)
Loading...