Page 1
Features
1. EMITTER
COLLECTOR
2.
BASE
3.
2SC2001(NPN)
TO-92 Bipolar Transistors
TO-92
High hFE and low V
=100mA) : 200(Typ)
h
FE(IC
V
CE(sat)
(700mA): 0.2V (Typ)
CE(sat)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS(T
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC
PC
Tj
T
stg
Collector-Base Voltage
Emitter-Base Voltage 5 V
Collector Current -Continuous 700 mA
Collector Power Dissipation 600 mW
Junction Temperature 150
Storage Temperature -55-150
30 V
25 V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF h
Rank
Range
FE
V
(BR)CBO
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
IC=100µA, IE=0
=10mA , IB=0 25 V
=100µA, IC=0 5 V
VCB=30 V, IE=0 0.1 µA
VCE=20 V, IB=0 0.1 µA
VEB=5 V, IC=0 0.1 µA
=1V, IC=100mA 90 400
V
CE
IC=700mA, IB= 70mA 0.6 V
IC= 700mA, IB=70mA 1.2 V
V
=6V, IC= 10mA
CE
f = 30MHz
30 V
50 MHz
M L K
90-180 135-270 200-400
Page 2
Typical Characteristics
2SC2001(NPN)
TO-92 Bipolar Transistors
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