Page 1
2SC1959(NPN)
TO-92 Bipolar Transistors
1. EMITTER
COLLECTOR
2.
3.
BASE
Features
Excellent h
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
PC
T
CBO
CEO
EBO
IC
TJ
stg
Collector-Base Voltage 35 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current –Continuous 0.5 A
Collector Power Dissipation 500 mW
Junction Temperature 150
Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
linearlity
FE
=25℃ unless otherwise noted)
A
℃
℃
Dimensions in inches and (millimeters)
TO-92
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions MIN TYP MAX UNIT
V(BR)
V(BR)
V(BR)
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
C
ob
IC= 100µA, IE=0 35 V
CBO
IC= 1mA , IB=0 30 V
CEO
IE= 100µA, IC=0 5 V
EBO
V
V
V
V
I
V
V
T
V
= 35V, IE=0 0.1 µA
CB
= 5 V, IC=0 0.1 µA
EB
=1 V, IC= 100mA 70 400
CE
=6 V, IC= 400mA 25
CE
= 100mA, IB= 10mA 0.25 V
C
= 1V, IC= 100mA 1.0 V
CE
= 12V, IC=2mA 300 MHz
CE
=6V,IE=0,f=1MHz 7 pF
CB
CLASSIFICATION OF h
Rank
h
70-140 120-240 200-400
FE(1)
Range
h
25(min) 40(min)
FE(2)
FE
O Y GR
Page 2
Typical Characteristics
2SC1959(NPN)
TO-92 Bipolar Transistors
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