Page 1
1
4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
2
3
Features
Complementary to 2SA817A
Driver Stage Application of 30 to 35 Watts Amplifiers
MAXIMUM RATINGS(T
=25℃ unless otherwise noted)
A
1. EMITTER
2. COLLECTOR
3. BASE
2SC1627A
TO-92MOD Transistor (NPN)
TO-92MOD
Symbol parameter
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous 0.4 A
Collector Power Dissipation 0.8 W
Junction Temperature 150
Storage Temperature Range -55-150
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Value Units
80 V
80 V
5 V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
CLASSIFICATION OF h
Rank O Y
Range
V
V
V
FE (1)
70-140 120-240
I
(BR)CBO
(BR)CEO
(BR)EBO
VCB=50V, IE=0
I
CBO
VEB=5V, IC=0
I
EBO
h
VCE=2 V, IC= 50mA 70
FE(1)
h
VCE=2 V, IC= 200mA 40
FE(2)
V
CE(sat)
V
BE(on)
f
T
=100μA , IE=0
C
IC=5mA, IB=0 80
=100μA, IC=0
I
E
IC= 200m A, IB= 20mA
VCE= 2V, IC= 5mA 0.55
V
= 10 V, IC= 10mA
CE
Dimensions in inches and (millimeters)
80
5
100
V
V
V
0.1
0.1
μA
μA
240
0.4 V
0.8 V
MHz
Page 2
Typical Characteristics
2SC1627A
TO-92MOD Transistor (NPN)
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