Page 1
1. EMITTER
2.
COLLECTOR
BASE
3.
Features
Collector output capacitance :
Cob=11 pF (TYP),20 pF (MAX)
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 5 V
Collector Current -Continuous 500 mA
Collector Power Dissipation 750 mW
Junction Temperature 150
Storage Temperature -55-150
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
=25 unless otherwise noted℃ )
A
80 V
70 V
℃
℃
2SC1318(NPN)
TO-92 Bipolar Transistors
TO-92
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
VCE=10V,IC=50mA,f=200MHz 120 MHz
f
T
C
ob
=10μA,IE=0 80 V
=2mA,IB=0 70 V
=10μA,IC=0 5 V
VCB=20V,IE=0 0.1 μA
VCE=10V,IC=150mA 85 340
VCE=10V,IC=500mA 40
IC=300mA,IB=30mA 0.6 V
IC=300mA,IB=30mA 1.5 V
VCB=10V,IE=0,f=1MHz 11 20 pF
CLASSIFICATION OF h
FE(1)
Rank
Range
Q R S
85-170 120-240 170-340
Page 2
Typical Characteristics
2SC1318(NPN)
TO-92 Bipolar Transistors
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