Page 1
2SC1162(NPN)
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
2.290 TYP
TO-126 Transistor
1. EMITTER
2. COLLECOTR
3. BASE
3
1 2
Features
Low frequency power amplifier
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
Pc Collector Power Dissipation 0.75 W
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous 2.5 A
=25℃ unless otherwise noted)
A
35 V
35 V
5 V
TO-126
Dimensions in inches and (millimeters)
TJ
T
stg
Junction Temperature 150
Storage Temperature -55-150
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-collector voltage
Transition frequency
*
pulse test
CLASSIFICATION OF h
Rank
FE1
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE
VCE=2V,IC=200mA 180 MHz
f
T
=1mA,IE=0 35 V
=10mA,IB=0 35 V
=1mA ,IC=0 5 V
VCB=35V,IE=0 20
VEB=5V,IC=0 20
VCE=2V,IC=0.5A 60 320
VCE=2V,IC=1.5A * 20
IC=2A,IB=200mA 1 V
VCE=2V,IC=1.5A 1.5 V
B C D
μA
μA
Range
60-120 100-200 160-320
Page 2
Typical Characteristics
2SC1162(NPN)
TO-126 Transistor
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