Page 1
2SB985
4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
TO-92MOD Transistor (PNP)
1. EMITTER
1
2
3
2.
COLLECTOR
3. BASE
Features
Power supplies, relay drivers, lamp drivers
Adoption of FBET,MBIT processes
Low saturation voltage
Large current capacity and wide ASO
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -60 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -6 V
Collector Current -Continuous -3 A
Collector Power Dissipation 0.9 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
TO-92MOD
Dimensions in inches and (millimeters)
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
C
f
IC=-10μA, IE=0 -60
IC=-1mA, IB=0 -50
IE=-10μA, IC=0 -6
VCE=-10V, IC=-50mA
T
ob
=-40V, IE=0
V
CB
=-4V, IC=0
V
EB
=-2V, IC=-100mA 100
V
CE
=-2V, IC=-3A 40
V
CE
=-2A, IB=-100mA
I
C
=-2A, IB=-100mA
I
C
=-10V, IE=0, f=1MHz
V
CB
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
V
V
560
-1
-1
μA
μA
-0.7
-1.2
V
V
150 MHz
39 pF
CLASSIFICATION OF h
Rank
Range
FE(1)
R S T U
100-200 140-280 200-400 280-560
Page 2
Typical Characteristics
2SB985
TO-92MOD Transistor (PNP)
Page 3
2SB985
TO-92MOD Transistor (PNP)
Loading...