Page 1
2SB834(PNP)
TO-220 Transistor
1. BASE
2. COLLECTOR
3
2
1
Features
Low Collector -emitter saturation voltage
V
DC current Gain
h
=60-200@ IC=0.5A
FE
Complementary to NPN 2SD880
MAXIMUM RATINGS (T
=1.0v(Max)@ IC=-3A,IB=-0.3A
CE(sat)
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous -3 A
Collector Power Dissipation 1.5 W
3. EMITTER
-60 V
-60 V
-7 V
TO-220
Dimensions in inches and (millimeters)
TJ
T
stg
Junction Temperature 150
Storage Temperature -55-150
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Turn-on Time
Storage Time
Turn-off Time
*Pulse test.
CLASSIFICATION OF h
FE(1)
Rank
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)*
h
FE(2)*
V
CE(sat)*IC
V
BE*
VCE=-5V,IC=-500mA, f=1MHz 9 MHz
f
T
0.4 μs
t
on
=-1mA,IE=0 -60 V
=-50mA,IB=0 -60 V
=-1mA,IC=0 -7 V
VCB=-60V,IE=0 -100 μA
VEB=-7V,IC=0 -100 μA
VCE=-5V,IC=-500mA 60 200
VCE=-5V,IC=-3A 20
=-3A,IB=-0.3A -1 V
VCE=-5V,IC=-500mA -1 V
VCC=-30V,Ic=-2A,
1.7 μs
t
stg
t
off
I
=-0.2A
B!=IB2
O Y
0.5 μs
Range
60-120 100-200
Page 2
Typical Characteristics
2SB834(PNP)
TO-220 Transistor
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