Page 1
2SB776(PNP)
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
2.290 TYP
TO-126 Transistor
1. EMITTER
2. COLLECTOR
3. BASE
3
1 2
Features
High current output up to 3A
Low saturation voltage Power dissipation
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -50 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current –Continuous -3 A
Collector Power Dissipation 1 W
Junction Temperature 150
Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
=25℃ unless otherwise noted )
A
℃ unless otherwise specified)
℃
℃
TO-126
Dimensions in inches and (millimeters)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
VCE=-5V,IC=-100mA 80 MHz
f
T
C
ob
=-100µA,IE=0 -50 V
=-5mA,IB=0 -50 V
=-100µA,IC=0 -5 V
VCB=-50V,IE=0 -1 µA
VEB=-3V,IC=0 -1 µA
VCE=-2V,IC=-20mA 100
VCE=-2V,IC=-1A 100 400
IC=-2A,IB=-200mA -0.5 V
IC=-2A,IB=-200mA -2 V
VCB=-10V,IE=0,f=1MHz 45 pF
Page 2
Typical Characteristics
2SB776(PNP)
TO-126 Transistor
Loading...