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2SB624
SOT-23 Transistor(PNP)
1.BASE
2.EMITTER
3.COLLECTOR
Features
High DC current gain. h
Complimentary to 2SD596.
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PD
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -30 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -700 mA
Total Device Dissipation 200 mW
Junction Temperature 150
Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified℃ )
:200 TYP.(VCE=-1V,IC=-100mA)
FE
=25℃ unless otherwise noted)
A
Dimensions in inches and (millimeters)
℃
℃
SOT-23
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
V
CE(sat)
* VCE=-6V, IC=-10mA -0.6 -0.7 V
V
BE
f
T
Cob V
* Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
FE
CLASSIFICATION OF h
Marking
(1)
BV1 BV2 BV3 BV4 BV5
=-100μA, IE=0
I
C
-30 V
IC= -1mA, IB=0 -25 V
= -100μA, IC=0
I
E
VCB=-30 V , IE=0 -0.1
VEB= -5V , IC=0 -0.1
-5 V
μA
μA
* VCE= -1V, IC= -100mA 110 400
* VCE=-1V, IC= -700mA 50
* IC=-700 mA, IB= -70mA -0.6 V
V
= -6V, IC= -10mA 160 MHz
CE
CB=-6V,IE=0,f=1MHZ 17 pF
Range
110-180 135-220 170-270 200-320 250-400
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Typical Characteristics
2SB624
SOT-23 Transistor(PNP)
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