LG 2sb560_to-92mod Datasheet

2SB560

4.700

5.100

1.730

2.030

0.400

0.600

0.900

1.100

0.400

0.500

5.800

6.200

4.000

8.400

8.800

2.900

3.100

13.800

14.200

1.600

0.000

0.380

1.500 TYP

TO-92MOD Transistor (PNP)

1. EMITTER

1
2
3

2. COLLECTOR

3. BASE

Features



High reverse voltage
Low saturation voltage





Suitable universal AF power amplifier use

MAXIMUM RATINGS (T

Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T

CBO

CEO

EBO

stg

Collector-Base Voltage -100 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -0.7 A
Collector Power Dissipation 900 mW
Junction Temperature 150
Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current

DC current gain

Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Out capacitance

CLASSIFICATION OF h

Rank
Range

=25℃ unless otherwise noted)

A

℃ unless otherwise specified)

FE(1)

V

(BR)CBOIC

V

(BR)CEOIC

V

(BR)EBO

I

CBO

I

EBO

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE(sat)

VCE=-10V, IC=-50mA 100 MHz

f

T

Cob V

= -10 uA, IE=0 -100 V
= -1 mA, IB=0 -80 V

IE= -10 μA, IC=0
VCB= -20 V , IE=0 -1
VEB= -4V , IB=0 -1

VCE= -5V, IC= -50mA 60 560
VCE= -5V, IC= -500mA 30

IC=-500 mA, IB= -50mA -0.3 -0.8 V
IC=-500 mA, IB= -50mA -0.85 -1.2 V

= -10 V ,f=1MHZ 15 pF

CB

D E F G

60 - 120 100 - 200 160 - 320 280 - 560

℃

℃

TO-92MOD

Dimensions in inches and (millimeters)

-5 V

μA
μA

Typical Characteristics

2SB560

TO-92MOD Transistor (PNP)