Page 1
2SB507(PNP)
TO-220 Transistor
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
Low Collector-Emitter Saturation Voltage
Vce(sat)=-1V(MAX)@I
DC Current Gain hFE=40~320@IC=-1A
Complementray to NPN 2SD313
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC
PC
TJ
T
stg
Collector-Base Voltage
Emitter-Base Voltage -5 V
Collector Current -Continuous -3 A
Collector Power Dissipation 1.75 W
Junction Temperature 150
Storage Temperature -55-150
A
=-2A,IB=-0.2A
C
=25℃ unless otherwise noted)
-60 V
-60 V
TO-220
Dimensions in inches and (millimeters)
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
V
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
(1)
h
h
Collector-emitter saturation voltage
Base-emitter voltage
(1)
V
(1)
V
Transition frequency
(1)
Pulse Test: Pulse Width=300μs,Duty Cycle≤2.0%
CLASSIFICATION OF h
FE(1)
Rank C D E F
IC=-100μA, IE=0 -60 V
(BR)CBO
IC=-10mA, IB=0 -60 V
(BR)CEO
IE=-100μA, IC=0 -5 V
(BR)EBO
VCB=-20V, IE=0 -100 μA
I
CBO
VCE=-60V, IE=0 -5 mA
I
CEO
VEB=-4V, IC=0 -1 mA
I
EBO
(1)
FE(1)
(1)
FE(2)
(1)
CE(sat)
(1)
BE
VCE=-5V, IC=-500mA,f=1MHz 5 MHz
f
T
=-2V, IC=-1A 40 320
V
CE
=-2V, IC=-0.1A 40
V
CE
=-2A, IB=-200mA -1 V
I
C
=-2V, IC=-1A -1.5 V
V
CE
Range
40-80 60-120 100-200 160-320
Page 2
2SB507(PNP)
TO-220 Transistor
Typical Characteristics
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