Page 1
Features
2SB1375(PNP)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
High Power Dissipation: P
Low voltage:V
Collector metal(Fin)is Coverd with Mold Regin
Complementary to 2SD2012
MAXIMUM RATINGS (T
(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A)
CE
=25℃ unless otherwise noted )
A
=25W(TC=25℃)
C
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC
PC
TJ
T
stg
Collector-Base Voltage
Emitter-Base Voltage -7 V
Collector Current -Continuous -3 A
Collector Dissipation 2 W
Junction Temperature 150
Storage Temperature -55-150
-60 V
-60 V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
=-100µA,IE=0 -60 V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
VCE=-5V,IC=-0.5A 9 MHz
f
T
C
ob
=-50mA,IB=0 -60 V
=-100µA,IC=0 -7 V
VCB=-60V,IE=0 -10 µA
VEB=-7V,IC=0 -10 µA
VCE=-5V,IC=-0.5A 100 320
VCE=-5V,IC=-2A 15
IC=-2A,IB=-0.2A -1.5 V
VCE=-5V,IC=-0.5A -1 V
VCB=-10V,IE=0,f=1MHz 50 pF
Page 2
2SB1375(PNP)
TO-220 Transistor
Typical Characteristics
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