Page 1
2SB1370(PNP)
TO-220F Bipolar Transistors
1. BASE
2. COLLECTOR
1 2 3
3. EMITTE
TO-220F
Features
Breakdown Voltage High
Reverse Cut-off Current Small
Saturation Voltage Low
Collector Power dissipation
: 2 W (Tamb=25℃)
P
CM
MAXIMUM RATINGS (T
30 W (Tcase=25
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
V
V
IC
CBO
CEO
EBO
Collector-Base Voltage
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -3 A
℃)
Dimensions in inches and (millimeters)
-60 V
TJ
T
stg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Junction temperature 150
Storage temperature -55-150
℃
℃
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
DC current gain hFE *
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency
Out capacitance
CE(sat)
BE(sat)
VCE=-5V, IC=-500mA,f=5MHz 15 MHz
f
T
Cob V
=-50μA, IE=0 -60 V
=-1mA, IB=0 -60 V
=-50μA, IC=0 -5 V
VCB=-60V, IE=0 -10 μA
VEB=-4V, IC=0 -10 μA
=-5V, IC=-500mA 100 320
V
CE
=-2A, IB=-0.2A -1.5 V
I
*
C
=-2A, IB=-0.2A -1.5 V
I
*
C
= -10 V ,f=1MHZ 80 pF
CB
*Pulse test: tp≤300μS, δ≤0.02.
CLASSIFICATION OF h
Rank
Range
FE
E F
100-200 160-320
Page 2
Typical Characteristics
2SB1370(PNP)
TO-220F Bipolar Transistors
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