Page 1
2SB1274(PNP)
TO-220 Transistor
1. BASE
2. COLLECTOR
3
2
1
Features
Wide ASO (Adoption of MBIT process).
Low saturation voltage.
High reliability.
High breakdown voltage.
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector- Base Voltage -60 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -6 V
Collector Current -Continuous -3 A
Collector Power Dissipation 2 W
Junction Temperature 150
Storage Temperature -55-150
3. EMITTER
℃
℃
TO-220
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE(1)
V
CE(sat)
V
BE
VCE=-5V, IC=-500mA 100 MHz
f
T
C
ob
Rank Q R S
=-1mA, IE=0 -60 V
=-5mA, IB=0 -60 V
=-1mA, IC=0 -6 V
VCB=-40V, IE=0 -0.1 μA
VEB=-4V, IC=0 -0.1 μA
VCE=-5V, IC=-500mA 70 280
VCE=-5V, IC=-3A 20
IC=-2A, IB=-200mA -1 V
VCE=-5V, IC=-500mA -1 V
VCB=-10V, IE=0, f=1MHz 60 pF
Range
70-140 100-200 140-280
Page 2
2SB1274(PNP)
TO-220 Transistor
Typical Characteristics
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